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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s IS Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC= 25C, Chip capability TC= 25C, pulse width limited by TJM TC= 25C TC= 25C TC= 25C IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFN 60N60 VDSS ID25 RDS(on) D G S = 600 V = 60 A = 75 mW S Maximum Ratings 600 600 20 30 60 240 60 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard packages * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2 4.5 200 TJ = 25C TJ = 125C 100 2 75 V V nA mA mA mW * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % Advantages * Easy to mount * * Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98593B (7/00) (c) 2000 IXYS All rights reserved 1-2 IXFN 60N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 60 15000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 360 43 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 52 110 26 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 78 190 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C iss Coss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 240 1.3 250 1.5 10 A A V ns mC A IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25A, -di/dt = 100 A/ms, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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